Free Shipping On All Orders Over ₹1000

G4PF50WD IGBT MOSFET

0 Reviews
Out of stock

Original price was: ₹368.00.Current price is: ₹296.70.

(-19%)

Discount per Quantity

QuantityDiscountPrice
5 - 105%281.87
11 - 208%272.96
20 - 5010%267.03
51 - 10012%261.10
  • Estimated delivery time 2-4 days
  • (Subject to stock Availability)

Product details

G4PF50WD is an IGBT Ultrafast recovery diode mainly used in fast switching applications, and It’s an electronic switch where we do not need manual movement for switching. Its recovery time is too fast this features make it used as a switching element. its operating voltage is 2.25V. And a collector current is 28A.

DATASHEET

Features

  • Low Power Loss
  • High-Efficiency
  • High Current Capability
  • Low Forward Voltage Drop
  • Avalanche Rugged Technology
  • GBT co-packaged with HEXFRED TM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
  • High Surge Capability
  • Low IGBT conduction loss
  • Guarding for Overvoltage Protection
Specifications
ModelG4PF50WD
PackageTO-247AC
TypeIGBT MOSFET
Collector Current28A
Max Lead Temperature300 Degree Centigrade
Max Power Dissipation200W
Gate to emitter voltage20V
Operating Temperature55 to 150° C
Country of OriginChina
Back to Top
Product has been added to your cart